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| 2SD2672 Transistors Low frequency amplifier 2SD2672 !Application Low frequency amplifier Driver !External dimensions (Units : mm) 2.8 1.6 0.95 0.95 (1) 1.9 0.4 (3) !Features 1) A collector current is large. (4A) 2) VCE(sat) 250mV At IC = 2A / IB = 40mA ROHM : TSMT3 (2) 2.9 1.0MAX 0.85 0.16 0.3 0.6 0 0.1 Each lead has same dimensions Abbreviated symbol : YX 0.7 (1) Emitter (2) Base (3) Collector !Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Symbol VCBO VCEO Collector-emitter voltage VEBO Emitter-base voltage IC Collector current ICP PC Power dissipation Junction temperature Tj Range of storage temperature Tstg Single pulse, PW=1ms !Packaging specifications Limits 15 12 6 4 8 500 150 -55~+150 Unit V V V A A mW C C Package Type Code Basic ordering unit (pieces) 2SD2672 Taping T146 3000 !Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Corrector output capacitance Pulsed Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 15 12 6 - - - 270 - - Typ. - - - - - 70 - 250 60 Max. - - - 100 100 250 680 - - Unit V V V nA nA mV - MHz pF Conditions IC=10A IC=1mA IE=10A VCB=15V VEB=6V IC=2A, IB=40mA VCE=2V, IC=200mA VCE=2V, IE=-200mA, f=100MHz VCB=10V, IE=0A, f=1MHz 1/2 2SD2672 Transistors !Electrical characteristic curves Ta=125C BASE SATURATION VOLTAGE : VBE (sat) (V) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) IC/IB=20/1 IC/IB=20 Pulsed COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 1000 1 1 IC/IB=20/1 Pulsed Ta=-40C Ta=25C DC CURRENT GAIN : hFE Ta=25C Ta=-40C 0.1 Ta=25C Ta=125C 100 0.1 Ta=125C 0.01 Ta=-40C VCE=2V Pulsed 10 0.001 0.01 0.1 1 10 0.001 0.001 0.01 0.1 1 10 0.01 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. collector current Fig.2 Collector-emitter saturation voltage base-emitter saturation voltage vs. collector current Fig.3 Collector-emitter saturation voltage vs. collector current COLLECTOR CURRENT : IC (A) Cib 1 Ta=25C Ta=125C 100 Cob TRANSITION FREQUENCY : fT (MHz) VBE=2V Pulsed EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 10 1000 1000 Ta=25C VCE=-2V f=100MHz 0.1 Ta=-40C 100 10 0.01 Ta=25 IC=0A f=1MHz 1 0.001 0.01 0.1 1 10 100 EMITTER TO BASE VOLTAGE : VEB(V) COLLECTOR TO BASE VOLTAGE : VCB(V) 0.001 0 1 2 10 0.01 0.1 1 10 BASE TO EMITTER CURRENT : VBE (V) EMITTER CURRENT : IE (A) Fig.4 Grounded emitter propagation characteristics Fig.5 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Fig.6 Gain bandwidth product vs. emitter current 10000 Ta=25C tdon VCE=-5V f=100MHz SWITCHING TIME : (ns) 1000 tstg 100 tf 10 tr 1 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) Fig.7 Switching time 2/2 |
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